Charge and heat transport in soft nanosystems in the presence of time-dependent perturbations

• Alberto Nocera,
• Carmine Antonio Perroni,
• Vincenzo Marigliano Ramaglia and
• Vittorio Cataudella

Beilstein J. Nanotechnol. 2016, 7, 439–464, doi:10.3762/bjnano.7.39

Thermoelectricity in molecular junctions with harmonic and anharmonic modes

• Bijay Kumar Agarwalla,
• Jian-Hua Jiang and
• Dvira Segal

Beilstein J. Nanotechnol. 2015, 6, 2129–2139, doi:10.3762/bjnano.6.218

• electrical and thermal conductances are sensitive to whether the mode is harmonic/anharmonic, the Seebeck coefficient, the thermoelectric figure-of-merit, and the thermoelectric efficiency beyond linear response, conceal this information. Keywords: counting statistics; efficiency; molecular junctions

• thermal conductance and the (dimensionless) thermoelectric figure of merit which determine the linear response thermoelectric efficiency. We obtain these coefficients numerically, by simulating Equation 13 under small biases. Figure 2–Figure 4 below display the behavior of G, S, Σ and ZT at room

• , which we provide here for the HO and the AH mode models, valid under the approximation of weak electron–vibration interaction. We explored linear-response properties, the electrical and thermal conductances G and Σ, as well as the Seebeck coefficient S, the thermoelectric figure of merit ZT, and the

Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1413–1420, doi:10.3762/bjnano.6.146

• small as 10 meV increases the thermopower to 475 μV/K. In contrast, the electronic thermal conductance of the device is quite low and does not change significantly with the small variation of the Fermi energy. The thermoelectric figure-of-merit could be high in this device provided the phonon

Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

• . In monolayer graphene, this increases the electronic thermoelectric figure of merit ZTe from 0.01 to 0.5. The largest values of ZTe are found when a nanopore is introduced into bilayer graphene, such that the current flows from one layer to the other via the inner surface of the pore, for which

• values as high as ZTe = 2.45 are obtained. All thermoelectric properties can be further enhanced by tuning the Fermi energy of the leads. Keywords: graphene nanoribbons; quantum transport; thermal conductance; thermoelectric figure of merit; thermopower; Introduction Nowadays, the performance of

• for this are changes in the phonon density of states, an increased phonon-boundary scattering and the dispersion of the nanostructures in low dimensional semiconductors [2][4][5][6]. The efficiency of thermoelectric materials and devices is determined by their thermoelectric figure of merit (ZT = S2GT

Synthesis and thermoelectric properties of Re₃As_6.6In_0.4 with Ir₃Ge₇ crystal structure

• Valeriy Y. Verchenko,
• Anton S. Vasiliev,
• Alexander A. Tsirlin,
• Vladimir A. Kulbachinskii,
• Vladimir G. Kytin and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 446–452, doi:10.3762/bjnano.4.52

• . Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit

• sample behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. This compound combines low thermal conductivity with a relatively low electrical conductivity, and therefore, its thermoelectric figure of merit ZT reaches only 0.0008 at room temperature